1) Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes - Phys. Rev. Lett. 95, 246804 - 2005 -
2) Prediction of an excitonic ground state in InAs/InSb quantum dots - Phys. Rev. Lett. 94, 016801 - 2005 -
3) Exponential decay properties of Wannier functions and related quantities - Phys. Rev. Lett. 86, 5341 - 2001 -
4) Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes - Phys. Rev. B 75, 075330 - 2007 -
5) Multiple charging of InAs/GaAs quantum dots by electrons or holes: addition energies and ground-state configurations - Phys. Rev. B 73, 115324 - 2006 -
6) Singlet-triplet splitting, correlation and entanglement of two electrons in self-assembled InAs/GaAs quantum dot molecules - Phys. Rev. B.72, 195307 - 2005 -
7) Asymmetry in self-assembled quantum dot-molecules made of identical InAs/GaAs quantum dot - Phys. Rev. B, 72, 081311(R) - 2005 -
8) Strain induced interfacial hole localization and light/heavy hole reversal in self-assembled quantum dots: compressive InAs/GaAs vs. tensile InAs/InSb - Phys. Rev. B 70, 235316 - 2004 -
9) Strain induced interfacial hole localization and light/heavy hole reversal in self-assembled quantum dots: compressive InAs/GaAs vs. tensile InAs/InSb - Phys. Rev. B 70, 235316 - 2003 -
10) First-principles study of the structure and lattice dielectric response of CaCu3Ti4O12 - Phys. Rev. B 65, 214112 - 2002 -
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