Faculty Profile
 
  Jian CHEN, J. Chen
     
Department: Institute of Applied Technology, Chinese Academy of Sciences
Mailing Address:
350 Shushanhu Road, Hefei, China
Postal Code:
230031
Phone:
Fax:
Homepage:
http://sourcedb.hf.cas.cn/rjc/ch/201601/t20160119_4520297.html
 
       

Research Profile

Jian CHEN, Ph.D, Professor, Principal Investigator, Hundred-Talent Program Researcher, Deputy Director of New Energy Materials and Technology and Engineering Center, Institute of Applied Technology.

Education,

1989, Bachelor, Materials Science and Engineering, Central South University, China,
1992, Master, Materials Science and Engineering, Institute of Metal Research, Chinese Academy of Sciences,
1995, Ph.D, Materials Science and Engineering, Institute of Metal Research, Chinese Academy of Sciences,

Work Experience

1995. 11 - 1996. 11, Visiting Scientist, Korea Institute of Machinery and Materials, Korea
1996. 11 - 1998. 11, Associate Professor, Powder Research Institute, Central South University, China
1998. 11 - 2000.11, Post-doctoral Researcher, University of Kentucky, USA, 
2000. 11 - 2002. 5, Materials Engineer, SECAT Inc. USA, 
2002.5 - 2005.5, Post-doctoral Researcher, Dalhousie University, Canada,
2005.5 - 2007.4, Research Scientist,Defense Research & Development Canada(DRDC), Canada, 
2007.5 - 2011.1, R&D Scientist, 6N Silicon Inc, Canada,
2011.2 - Present, Research Scientist, Institute of Applied Technology, CAS, China. 

Dr. Chen was selected as a Hundred-Talent Program Researcher of Chinese Academy of Sciences in 2012. He has successfully developed several technologies and products. For example, a heat treatment technology can reduce age-softening effect in Al-Mg alloy, which can save lots of aluminum alloy for industry; NiMnGa magnetic shape memory alloys are on-trial tests on missile flight control and ocean wave energy harvesting in navy; During his work in 6N Silicon Inc of Canada, he invented a technology, which enabled mass production of solar grade silicon by Al-Si alloy method for the first time and hence received several awards worldwide. During the research of silicon purification by Al-Si alloy method, he has proposed a concept of apparent segregation coefficient and method to calculate it. By studying the coupling effects between temperature field, melt convection field, electromagnetic field and interaction between impurity elements, he has greatly improved the efficiency of purification of the key impurity elements B and P by the Al-Si alloy method. The purification efficiency of both B and P broke records to beyond the thermodynamic limits, which lays a solid foundation for commercializing this technology. In addition, he has published more than 60 technical papers, applied more than 10 patents. His current research projects include Hundred-Talent Program of Chinese Academy of Sciences, National Natural Science Fund etc. 

Current research activities mainly focus on the following areas:
1. Solar cell materials 
2. Li-ion battery materials
3. Mineral materials purification and processing

Contact Info:
Jian CHEN, PhD, Principal Investigator,
New Energy Materials Technology & Engineering Research Center
Institute of Applied Technology, Chinese Academy of Sciences
350 Shushanhu Road
Hefei, China, 230031
E-mail:jchen@ipp.ac.cn
 
     
Selected Publications
1) Effect of Ti Addition on B Removal during Silicon Refining in Al-30%Si Alloy Directional Solidification , Separation and Purification Technology , 2017 , 174 (2017) 345–351
2) Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot , Journal of Crystal Growth , 2017 , 458 (2017) 66–71
3) Removal of impurities from metallurgical grade silicon during Ga-Si solvent refining , Silicon , 2017 , 9 (2017): 77-83
4) Effect of kinetics on P removal by Al-Si solvent refining at low solidification temperature , Journal of Alloys and Compounds , 2016 , Volume 685, P604-609
5) Mechanism of boron removal from Si-Al melt by Ar-H2 gas mixtures , Transactions of Nonferrous Metals Society of China , 2016 , 2016. 26(11): 3046~3051
6) Mechanism of B removal by solvent refining of silicon in Al–Si melt with Ti addition , Journal of Alloys and Compounds , 2016 , Volume 672, 2016, P489–496
7) Effect of iron addition (up to 10000 ppmw) on silicon purification during Al-Si solvent refining , Journal of Crystal Growth , 2016 , 453 (2016): 49-53
8) Diketopyrrolopyrrole or benzodithiophene-arylamine small-molecule hole transporting materials for stable perovskite solar cells , RSC Adv. , 2016 , 6 (2016) 87454-87460
9) Refining of metallurgical grade Si by solidification of Al–Si melt under electromagnetic stirring , Journal of Materials Processing Technology , 2015 , 222 (2015) 142–147
10) Effect of cooling rate on phosphorus removal during Al-Si solvent refining , Metallurgical And Materials Transactions B , 2015 , VOLUME 46B, 2015,542-544
11) Effect of cooling rate on boron removal and solidification behavior of Al-Si alloy , High Temperature Materials and Processes , 2015 , 34: 43-49
12) The Mechanism of P Removal by Solvent Refining in Al-Si-P System , Metallurgical and Materials Transactions B , 2015 , VOLUME 46B, 2430-2437
13) Effect of Ga addition on morphology and recovery of primary Si during Al-Si alloy solidification refining , High Temperature Materials and Processes , 2015 , 34(8): 833-838
14) Distribution of Al in Al–Si Alloys during electromagnetic continuous casting with cylindrical open ended crucible , International Journal of Cast Metals Research , 2015 , V28 (2015), 269-275
15) Regulating the mesogenic properties of imidazolium salts by modifying N3-substituents , Science China Chemistry , 2015 , Vol.58 No.12: 18
 
Recruitment information
Students majoring in Materials Science, Metallurgy, Physics and other related majors are welcome to study in his group for PhD and MS degrees.
       
       
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TEL: +86-551-63600279, E-mail: tianlin@ustc.edu.cn