Faculty Profile
 
  WANG Deliang
     
Department: Hefei National Laboratory of Physical Sciences at the Microscale
Mailing Address:
Hefei National Laboratory of Physical Sciences at the Microscale, University of Science and Technology of China, 96 Jinzhai Rd, Hefei, Anhui, PR China
Postal Code:
230026
Phone:
+86-551-3600450
Fax:
86-551-3606266
Homepage:
http://www.hfnl.ustc.edu.cn/2012/0917/894.html
 
       

Research Profile

	  
      under construction ......
      
 
     
Selected Publications
1)  Dye-sensitized solar cells with modified TiO2 surface chemical states: the role of Ti3+ , Appl. Phys. Lett. , 2011 , 99, 192104 (2011).
2)  Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale , Appl. Phys. Lett. , 2011 , 99, 143502 (2011).
3)  Study of interdiffusion reaction at the CdS/CdTe interface , J. Materials Research , 2011 , 26, 697 (2011).
4)  Effect of CdCl2 annealing treatment on thin CdS films prepared by chemical bath deposition , Thin Solid Films , 2010 , 518, 6858 (2010).
5)  in-situ observation of phase formation in a Cu-In-2Se precursor layer using micro-Raman scattering spectroscopy , J. Materials Research , 2009 , 24, 2373 (2009).
6)  P-type CuInSe2 thin films prepared by selenization of one-step electrodeposited precursors , J. Materials Research , 2009 , 24, 2293 (2009).
7) Lattice vibration fundamentals in nanocrystalline anatase investigated with Raman scattering , J. Phys.: Condens. Matter , 2008 , 20, 085212 (2008).
8) Lattice vibration fundamentals of nanocrystalline anantase: temperature-dependent study using micro-Raman scattering spectroscopy , J Appl Phys. , 2007 , 101, 113501 (2007).
9) Lattice Vibration Fundamentals of Anatase Nanocrystalline TiO2 Thin Films Detected Using Unpolarized Infrared Spectroscopy , Chemistry Letters , 2006 , 35, 884 (2006).
10) Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique , Applied Physics Letters , 2006 , 88, 041913 (2006).
11) Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si(111)by metalorganic chemical vapor deposition , Journal of Applied.Physics , 2005 , 97(2005)
12) Characterization of GaN grown on patterned Si(111) substrate , Journal of Crystal Growth , 2004 , 272
13) Si-doped cubic GaN grown on Si(001)substrate coated with a thin flat SiC buffer layer , Applied Physics Letters , 2002 , 80
14) Initial growth of hexagonal GaN grown on a Si(111)substrate coated with an ultra-thin SiC buffer layer , Journal of Crystal Growth , 2002 , 236
15) Dislocation core structures in GaN grown on Si(111)subtrate , Philosophy Magazine Letters , 2002 , 82
16) Growth of Hexagonal GaN on si(111) Coated with a Thin Flat SiC Buffer Layer , Applied Physics Letters , 2000 , 77
17) Heteroepitaxial Growth of Cubic GaN on Si(001)Coated with Thin Flat SiC by Plasma-Assisted Molecular Beam Epitaxy , Applied Physics Letters , 2000 , 76
 
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TEL: +86-551-63600279, E-mail: tianlin@ustc.edu.cn