Wang Deliang, professor and Ph.D. supervisor at the University of Science and Technology of China (USTC). Wang graduated from the Department of Physics at the University of Science and Technology Beijing in 1989. He received his master's degree from the Institute of Solid State Physics, Chinese Academy of Sciences (CAS) in 1992, and his PhD. degree from Goettingen University, Germany in 1997.
Professor Wang had studied or worked at the Goettingen University (Germany), the Joint Research Center for Atom Technology (Japan), the Virginia Commonwealth University (USA), and the Hong Kong University of Science and Technology for 10 years. Given that he had been engaged in scientific research at first-class research institutions, he boasts rich experience in large-scale instrument setup,semicondutor thin film growth, and device fabrication. After returning to China, he has designed and built several sets of the most advanced equipments for thin film growth. Currently, the main research interests of Wang's team are in semiconductor thin film and device fabrication (solar cells). The lab has set up a variety of instruments or equipments for thin film growth, device fabrication, and characterizations. The lab has set itself the goal of striving for preparation of high conversion efficiency solar cells, so students seeking for postgraduate studies here can be assured of acquiring the most up-to-date practical knowledge and research experience needed to develop them into competitive talents in the job market after their graduation.
Since 1993, Professor Wang has published about 50 research papers in journals with relatively high impact factors, such as Applied Physics Letters, Journal of Applied Physics, IEEE Electronic Device Letter, etc., with a total of citations exceeding over about 400 times. He has been invited many times to give a talk at international conferences. The conversion efficiency of solar cells prepared by Professor Wang's research team has been in the leading position domestically. The philosophy underlying Professor Wang's research team is to let students get high-level research guidance and research experience at the first-class research institution in China. The research work in the lab is full of challenge, but with bright prospects for commercial applications .
1) Dye-sensitized solar cells with modified TiO2 surface chemical states: the role of Ti3+ , Appl. Phys. Lett. , 2011 , 99, 192104 (2011).
2) Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale , Appl. Phys. Lett. , 2011 , 99, 143502 (2011).
3) Study of interdiffusion reaction at the CdS/CdTe interface , J. Materials Research , 2011 , 26, 697 (2011).
4) Effect of CdCl2 annealing treatment on thin CdS films prepared by chemical bath deposition , Thin Solid Films , 2010 , 518, 6858 (2010).
5) in-situ observation of phase formation in a Cu-In-2Se precursor layer using micro-Raman scattering spectroscopy , J. Materials Research , 2009 , 24, 2373 (2009).
6) P-type CuInSe2 thin films prepared by selenization of one-step electrodeposited precursors , J. Materials Research , 2009 , 24, 2293 (2009).
7) Lattice vibration fundamentals in nanocrystalline anatase investigated with Raman scattering , J. Phys.: Condens. Matter , 2008 , 20, 085212 (2008).
8) Lattice vibration fundamentals of nanocrystalline anantase: temperature-dependent study using micro-Raman scattering spectroscopy , J Appl Phys. , 2007 , 101, 113501 (2007).
9) Lattice Vibration Fundamentals of Anatase Nanocrystalline TiO2 Thin Films Detected Using Unpolarized Infrared Spectroscopy , Chemistry Letters , 2006 , 35, 884 (2006).
10) Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique , Applied Physics Letters , 2006 , 88, 041913 (2006).
11) Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si(111)by metalorganic chemical vapor deposition , Journal of Applied.Physics , 2005 , 97(2005)
12) Characterization of GaN grown on patterned Si(111) substrate , Journal of Crystal Growth , 2004 , 272
13) Si-doped cubic GaN grown on Si(001)substrate coated with a thin flat SiC buffer layer , Applied Physics Letters , 2002 , 80
14) Initial growth of hexagonal GaN grown on a Si(111)substrate coated with an ultra-thin SiC buffer layer , Journal of Crystal Growth , 2002 , 236
15) Dislocation core structures in GaN grown on Si(111)subtrate , Philosophy Magazine Letters , 2002 , 82
16) Growth of Hexagonal GaN on si(111) Coated with a Thin Flat SiC Buffer Layer , Applied Physics Letters , 2000 , 77
17) Heteroepitaxial Growth of Cubic GaN on Si(001)Coated with Thin Flat SiC by Plasma-Assisted Molecular Beam Epitaxy , Applied Physics Letters , 2000 , 76