Faculty Profile
 
  HE Lixin
     
Department: Department of Optics & Optical Engineering
Mailing Address:
96 Jinzhai Road, University of Science and Technology of China, Hefei, Anhui, China
Postal Code:
230026
Phone:
+86-551-63601061
Fax:
Homepage:
http://lqcc.ustc.edu.cn/helx/
 
       

Research Profile

From September 1990 to July 1994, He Lixin studied at the Department of Physics, University of Science and Technology of China (USTC) for his  bachelor's degree. From September1994 to July 1997, he undertook his postgraduate studies at the Center for Fundamental Physics, USTC and received his Master of Science degree. From September1998 to August 2003, he earned his doctoral degree from the Department of Physics and Astronomy of Rutgers University. From September 2003 to January 2006, he pursued his postdoctoral studies at the National Renewable Energy Laboratory, USA. Since January 2006, he has been working at the Key Laboratory of Quantum Information China at USTC and has been selected into the “Hundred Talents Program” of the Chinese Academy of Sciences. He was awarded National Natural Science Funds for Distinguished Young Scholars in 2010.
 
     
Selected Publications
1) Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes , Phys. Rev. Lett. 95, 246804 , 2005 ,
2) Prediction of an excitonic ground state in InAs/InSb quantum dots , Phys. Rev. Lett. 94, 016801 , 2005 ,
3) Exponential decay properties of Wannier functions and related quantities , Phys. Rev. Lett. 86, 5341 , 2001 ,
4) Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes , Phys. Rev. B 75, 075330 , 2007 ,
5) Multiple charging of InAs/GaAs quantum dots by electrons or holes: addition energies and ground-state configurations , Phys. Rev. B 73, 115324 , 2006 ,
6) Singlet-triplet splitting, correlation and entanglement of two electrons in self-assembled InAs/GaAs quantum dot molecules , Phys. Rev. B.72, 195307 , 2005 ,
7) Asymmetry in self-assembled quantum dot-molecules made of identical InAs/GaAs quantum dot , Phys. Rev. B, 72, 081311(R) , 2005 ,
8) Strain induced interfacial hole localization and light/heavy hole reversal in self-assembled quantum dots: compressive InAs/GaAs vs. tensile InAs/InSb , Phys. Rev. B 70, 235316 , 2004 ,
9) Strain induced interfacial hole localization and light/heavy hole reversal in self-assembled quantum dots: compressive InAs/GaAs vs. tensile InAs/InSb , Phys. Rev. B 70, 235316 , 2003 ,
10) First-principles study of the structure and lattice dielectric response of CaCu3Ti4O12 , Phys. Rev. B 65, 214112 , 2002 ,
 
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TEL: +86-551-63600279, E-mail: tianlin@ustc.edu.cn